Aplicações de corrosão por plasma usando reatores ICP e RIE para tecnologia MEMS / Plasma etching applications using ICP and RIE reactors for MEMS technology

AUTOR(ES)
FONTE

IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia

DATA DE PUBLICAÇÃO

28/08/2012

RESUMO

This thesis is based on etching processes applications in cold plasmas (room temperature) using RIE (Reactive Ion Etching) and ICP (Inductively Coupled Plasma), as reactors, applied to specific areas of microelectronics and MEMS devices in semiconductors industries and laboratories. Five applications are presented: Thinning gate CMOS Transistor - conventional methods such as photolithography with resolution greater than 2 ?m and RIE reactor with gaseous mixtures: SF6/CF4/CHF3 and SF6/CF4/N2 were used to obtain structures below 1 ?m; GaAs and AlGaAs structures etching for HEMT transistors application - RIE reactor and mixtures containing SiCl4/Ar for etching and O2/SF6/Ar for cleaning were used; Bulk etching for pressure sensors - ICP reactor and gas mixture SF6/Ar were used; Deep Si etching for die separating - ICP reactor and gas mixtures SF6/Ar with bias for channel etching and O2/Ar for photoresist removal were used; Ni-P, Ni-B and SiO2 masks testing in deep etching processes - ICP reactor and gas mixtures as SF6/Ar and C4/F8 were used. In each applications a study of its main requirements was made, to achieve a better commitment between the parameters of the etching process.

ASSUNTO(S)

corrosão semicondutores complementares de oxido e metal microeletrônica engenharia elétrica - materiais corrosion complementary metal oxide semiconductor microelectronics electrical engineering

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