Transistor
Mostrando 1-12 de 133 artigos, teses e dissertações.
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1. Transistor Avalanche Non-Coherent Pulse Generator
Abstract A transistor avalanche noise generator (TANG) is described. It is based on an off-the-shelf RF transistor with an integrated planar monopole. From a 70 V DC power it generates sub-nanosecond pulses with amplitudes close to 1 V. The proposed solution does not employ step recovery diodes, and it is based as the name implies on the operation of a bipol
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2020-06
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2. Use of Arduino in the Development of a New and Fast Automated Online Preconcentration System Based on Double-Knotted Reactor for the Mn Determination in Tea Samples by Flame Atomic Absorption Spectrometry (F AAS)
In the present paper, an automated online preconcentration system based on the use of two knotted reactors (KR) was developed for Mn determination in tea samples by flame atomic absorption spectrometry (F AAS). The system automation was performed by using four solenoid valves to switch sample streams and reagents. Valves were driven electronically by an inte
J. Braz. Chem. Soc.. Publicado em: 2020-01
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3. An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications
Abstract This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of th
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2019-03
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4. Mechanisms of Ion Detection for FET-Sensors Using FTO: Role of Cleaning Process, pH Sequence and Electrical Resistivity
The use of FTO samples as an extended gate field effect transistor biosensor is presented. The FTO samples were produced by spray pyrolysis technique. The cleaning process is shown to have a fundamental importance for the final sensitivity of the samples when multiple re-usage is adopted. The role of electrical resistivity and morphology of the films are inv
Mat. Res.. Publicado em: 31/07/2017
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5. A JL-SDR-IMPATT Device with Improved Efficiency
Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device wo
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2017-04
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6. Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors
We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (µFET) of 0.18 cm2V-1s-1.
Mat. Res.. Publicado em: 19/09/2016
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7. Effects of Measurements Conditions on an Extended-Gate FET used as pH sensor
Fluorine-doped tin oxide (SnO2:F) was investigate as the sensitive part of a pH sensor in the extended-gate field effect transistors (EGFET) device, which provided a linear response for pH range from 2 to 12; the sensitivity was 37 mV.pH-1 for experiments performed in absence of light. Neutral pH, leads to a transistor’s electric current remained practical
Mat. Res.. Publicado em: 05/02/2016
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8. Comparative Sensibility Study of WO3 ph Sensor Using EGFET and Ciclic Voltammetry
In this present study, the investigation about pH sensorial properties of WO3, via sol-gel, was evaluated by Voltammetry and Extended Gate Field Effect Transistor techniques. The X-ray diffractogram indicates the presence of a lamellar structure, d = 0.69 nm, resulting in WO3.2H2O. From Scanning Electron Microscopy of WO3.2H2O was observed a process correspo
Mat. Res.. Publicado em: 2015-02
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9. Analysis of Total Ionizing Dose Effects on 0.13 µm Technology-Temperature-Compensated Voltage References
ABSTRACT: The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 µm technology. The analysis will mainly focus on the effects of t
J. Aerosp. Technol. Manag.. Publicado em: 2013-09
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10. Ondas estacionárias em cordas e determinação da densidade linear de um fio
Este experimento explora e analisa os recursos gratuitos disponíveis on-line que podem ser utilizados no ensino e aprendizagem de Física. O experimento consiste em utilizar a saída de áudio de um computador para variar a frequência em uma das extremidades de um fio utilizando o software SweepGen, disponível gratuitamente na internet. Este trabalho apre
Rev. Bras. Ensino Fís.. Publicado em: 2013-09
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11. Indium tin oxide synthesized by a low cost route as SEGFET pH sensor
Polycrystalline ITO films with good optoelectronics characteristics and homogeneous surface has been obtained upon annealing at 550 °C in N² atmosphere using a low-cost chemical vapor deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH,
Mat. Res.. Publicado em: 02/07/2013
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12. Evaluation study of an ion selective field effect transistor electrode for measuring quality parameters of fuel ethanol
Um eletrodo íon seletivo baseado em transistor de efeito de campo (ISFET) foi avaliado na medição de pH e índice de acidez (IA) de etanol combustível e comparado a dois eletrodos de vidro contendo soluções de referência diferentes: solução aquosa de KCl (eletrodo glass-KCl) e solução etanólica de LiCl (eletrodo glass-LiCl). O pH foi determinado
J. Braz. Chem. Soc.. Publicado em: 2013-01