The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range

The current-voltage (I-V) characteristics of metal-insulator-semiconductor (Al/GaN/p-GaAs) Schottky barrier diodes (SBDs) were investigated over a wide temperature range of 80-380 K. By using the thermionic emission (TE) theory, the zero bias barrier height ΦB0 calculated from I-V characteristics was found to increase with increasing temperature as the ideality factor n decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. The observed variation in the ΦB0 and n is attributed to the spatial barrier inhomogeneities in SBD by assumin...