Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films

Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and optical non-volatile memories. The key of this application is based on the changes in the physical properties (electrical conductivity or refractive index) of these films as a result of structural transformation between amorphous and crystalline states. Both states are highly stable and it is relatively easy to change between them when they are prepared as thin films. In this work, structural and electrical behaviours with the temperature of thin films with compositions Ge13Sb5Te82, Ge1Sb2Te4, Ge2S...