Studies of phosphorus Gaussian profile emitter silicon solar cells

Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (h @ 21.60-21.74%)with doping levelsnus = 1x10(19) - 5x10(18) (cm-3) and (1.2-2.0) mum emitter thickness range...

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