Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction

This work is a study of the microstructural properties of the polycrystalline ternary compounds AgIn5S8, AgIn5Se8, and AgIn5Te8 by X-ray diffraction technique (XRD). The full-width-half-maximum (FWHM) of the XRD profile is measured as function of the diffraction angle and used to estimate the microstructural parameters. In general, a microstructural characterization by XRD is principally performed by Strain/Size analysis based on the modified Scherrer formula, which in turn, allows for mean grain size and average microstrain to be computed. However, when applied to polycrystalline bulk semicon...