B-N Codoped p Type ZnO Thin Films for Optoelectronic Applications

The success of codoping by donor-acceptor impurities in accomplishing p type ZnO thin films deposited by spray pyrolysis technique is reported here. Monodoping ZnO with N altered the conductivity type but the resistivity is too high making it practically impossible to be useful in optoelectronic applications. B-N codoping increased the carrier concentration and obtained comparatively low resistivity because codoping enhanced the acceptor incorporation by forming acceptor-donor-acceptor complex in the band gap. XRD analysis revealed the dependence of dopant incorporation on the texture and micr...