Spintronic
Mostrando 1-7 de 7 artigos, teses e dissertações.
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1. Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum well (QW) grown on (3 1 1)B oriented GaAs substrates.We have performed electrical and optical measurements in the presence and absence
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 15/03/2011
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2. Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots depends on applied voltage and light intensity. Our results were explained by the capture of minority carriers (holes) to quantum dot energy
Publicado em: 2010
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3. Andreev transport in double quantum dots coupled to superconductor and ferromagnetic leads / Transporte por reflexão de Andreev em pontos quanticos duplos acoplados a eletrodos supercondutores e ferromagneticos
In this work we studied the quantum transport in two hybrid nanostructures composed of double quantum dots (DQD)s coupled to superconductor (S) and ferromagnetic (F) leads. The first nanostructure, denoted by F - QDa - QDb - S, is composed of a ferromagnet, two quantum dots, and a superconductor connected in series. In the second nanostructure, denoted by (
Publicado em: 2010
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4. Diluted magnetic nanostructures in the presence of applied external fields / Estudo de nano estruturas diluídas magnéticas na presença de campos externos aplicados
In the present work we studied properties of the spintronic transport of nanostructures formed by layers of diluted magnetic semiconductors (DMS) and conventional semiconductors with crossed fields applied. The electric field is in the growth direction and the magnetic field is perpendicular t o this one. We studied two configurations of nanostructures where
Publicado em: 2008
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5. A selfconsistent calculation of the transport properties of a double barrier spin filter
A double barrier resonant tunneling device in which the well is made of a semi-magnetic material can work as an efficient spin filter. Today it is possible to make semiconductors that are ferromagnetic at room temperature. Therefore the device studied here has a great potential to be used as a polarizer, an analyzer and other spintronic applications. We disc
Brazilian Journal of Physics. Publicado em: 2006-06
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6. Filtros de spin não-magneticos controlados por voltagem / Voltage controlled non-magnetic spin filters
The aim of this work was to study the transport properties of nonmagnetic semiconductor heterostructures: double barrier diodes ? DBD. Our attention was focused on the carrier spin polarization through the structure. First we present the phenomenology behind the carrier transport and how the DBD can act as a spin filter. In the sequence, we present the exper
Publicado em: 2006
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7. Propriedades de spintrônica do gás de elétrons e dinâmica do íon Mn em nano estruturas semicondutoras magnéticas
Esta tese apresenta um estudo teórico das propriedades de spintrônica do gás de elétrons em nano estruturas semicondutoras magnéticas obtidas a partir de semicondutores magnéticos diluídos (III, Mn)V e (II, Mn)VI da dinâmica do íon Mn na presença de um background de 2DEG (Gás de elétrons bi-dimensional). Primeiramente, realizamos cálculos para a
Publicado em: 2006