Silicon Nitride Film
Mostrando 1-5 de 5 artigos, teses e dissertações.
-
1. Mechanical Loss Angle Measurement for Stressed thin Film Using Cantilever Ring-Down Method
Mechanical loss of the coating materials, and hence thermal noise from the mirror coatings, is a limiting factor for the sensitivity of the laser interferometer gravitational waves detector at its most sensitive frequency range. Mechanical loss of the thin films are often measured using the cantilever ring-down method. But when the thin film is under stress,
Mat. Res.. Publicado em: 28/05/2018
-
2. Electrochemical Behavior of Titanium Nitride Thin Films Deposited on Silicon by Plasma Discharge Technique in Cathodic Cage
Titanium nitride films were deposited on silicon by plasma discharge in cathodic cage with holes and without holes on the sides. Each film was deposited with a pressure of 253 Pa, treatment time of 2 h, and at diverse conditions of temperature and gas flow of N2 and H2. The electrochemical polarization and electrochemical impedance techniques were used to un
Mat. Res.. Publicado em: 22/08/2016
-
3. Ultra baixo coeficiente de atrito no deslizamento de Si3N4-Al2O3. Efeitos da força aplicada, velocidade de deslizamento e temperatura do ensaio. / Ultra low friction coefficient in sliding of Si3N4-Al2O3. Effects of applied load, sliding velocity and test temperature.
Tribological tests were conducted in a ball on disk setup, using water as lubricant. Were used a silicon nitride ball and alumina disk. The tests were conducted to investigate the effects of sliding speed, applied load and temperature on friction coefficient. The silicon nitride balls and alumina disks were characterized by determining density, Vickers hardn
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 27/02/2012
-
4. Development of devices based on GaAs substrate with passivation by ECR plasma / Desenvolvimento de dispositivos baseados em substrato de GaAs com passivação por plasma ECR
Este trabalho apresenta um método simples de passivação de superfícies semicondutoras III-V de substratos de arseneto de gálio (GaAs) e de heteroestruturas de fosfeto de gálio-índio sobre arseneto de gálio (InGaP/GaAs), que são utilizados em transist res de efeito de campo, MESFET (Metal-Semiconductor Field Effect Transistor) e MISFET Metal-Insulato
Publicado em: 2007
-
5. Glass passivation in power rectifiers. / Passivação a vidro de junções semicondutoras em dispositivos de potência.
The search for better electrical properties, new passivating materials for semiconductors junctions and the process of obtaining those ones have being studied intensively in the latest decades. There are two types of passivation layers: thick film and thin film. The first one is obtained by the deposition of silicon oxides, silicon nitride or silicon carbide
Publicado em: 2006