Misfit Dislocations
Mostrando 1-2 de 2 artigos, teses e dissertações.
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1. Microstructural Analysis of AgIn5VI8 (VI: S, Se, Te) Ternary Semiconductors by X-Ray Diffraction
This work is a study of the microstructural properties of the polycrystalline ternary compounds AgIn5S8, AgIn5Se8, and AgIn5Te8 by X-ray diffraction technique (XRD). The full-width-half-maximum (FWHM) of the XRD profile is measured as function of the diffraction angle and used to estimate the microstructural parameters. In general, a microstructural characte
Mat. Res.. Publicado em: 14/11/2019
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2. ENHANCED DIFFUSION AND ELECTRICAL BEHAVIOR OF MISFIT DISLOCATIONS IN EPITAXIAL Si/Si(Ge)
This dissertation addresses enhanced or \"pipe\" diffusion of dopants along localized misfit dislocations (MD) using a \"model\" misfit dislocation structure at epitaxial Si/Si(Ge) interfaces and provides basic information on the merits of applicability of novel bandgap engineered devices. Pipe diffusion is modeled and explored to create pipe-like one dimens
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 1994