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1. Interação plasmon-fônon LO em superredes semicondutoras
This work presents a Raman investigation of the optical vibrations in highly doped In-GaAs/InP and GaAs/AlGaAs superlattices (SLs). The InGaAs/InP SLs grown with different periods were analyzed using polarized Raman techniques. No Raman selection rules were found in the long period InGaAs/InP SLs due to the structural defects in the bulk materials constituti
Publicado em: 2008