Metallic Oxide Semiconductor
Mostrando 1-6 de 6 artigos, teses e dissertações.
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1. Dendritic Gold Nanoparticles Towards Transparent and Electroactive Electrodes
Abstract: The combination of UV-visible absorption and electrochemical experiments (spectroelectrochemistry) enables to obtain highly specific spectroscopic information (in situ and operando) from modified surfaces. However, such application can be limited by the self-absorbance, for example, when metallic nanoparticles are present on modified surfaces. Indi
An. Acad. Bras. Ciênc.. Publicado em: 28/11/2019
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2. Effect of High-pressure Torsion on Corrosion Behavior of a Solution-treated Al-Mg-Sc Alloy in a Saline Solution
The effect of the increase in crystalline defects in the structure generated by high-pressure torsion (HPT) on the corrosion behavior of metallic materials is not well understood. This report evaluates the influence of HPT on the corrosion behavior of a solution treated Al-3wt% Mg-0.2wt% Sc alloy in a 3.5 wt./v.% NaCl solution. The electrochemical behavior o
Mat. Res.. Publicado em: 04/11/2019
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3. Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films
Vanadium (5 at. %) doped Indium Oxide (V: In2O3) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10-3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of elec
Mat. Res.. Publicado em: 08/12/2016
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4. Propriedades optoeletrônicas de interfaces híbridas metal/semicondutor orgânico preparadas por deposição assistida por feixe de íons (IBAD) / Optoelectronic properties of interfaces hybrid metal / organic semiconductor prepared by ion beam assisted deposition (IBAD)
In this work, optoelectronic properties from organic light emitting devices (OLEDs), based on conjugated polymers with metallic cathode, which were deposited by ion beam assisted deposition technique (IBAD) were studied. The main objective of this work is to produce a hybrid non abrupt metal/polymer interface and to study its effects on electron injection. T
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 21/07/2011
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5. Semiconductor characteristics of Nd doped PbO-Bi2O3-Ga2O3 films
In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. This material has important electro-optic applications and offers possibilities for semiconductor applications in heavy metal oxide semiconductor technology. In this study thin films of PbO-Bi2O3-Ga2O3 were deposited by reactive sputtering. Two targets with
Brazilian Journal of Physics. Publicado em: 2006-06
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6. Fonte de tensão de referencia ajustavel implementada com transistores MOS / Adjustable voltage reference source implemented with MOS transistors
Uma nova técnica de compensação de temperatura para implementar tensões de referência em circuitos CMOS é descrita, desde o seu fundamento teórico até a comprovação experimental feita com amostras de circuitos integrados protótipos que a implementam. A ténica proposta se baseia no fato de que a tensão entre gate1, e fonte, VGS, de um transistor
Publicado em: 2005