Junctionless
Mostrando 1-2 de 2 artigos, teses e dissertações.
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1. A JL-SDR-IMPATT Device with Improved Efficiency
Abstract An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device wo
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2017-04
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2. Operação analógica de transistores de múltiplas portas em função da temperatura. / Analog operation of multiple gate transistors as a function of the temperature.
In this work it is presented an analysis of the analog operation of multiple gate transistors, evaluating the Early Voltage, the open-loop voltage gain, the transconductance over the drain current ratio (gm/IDS), the drain conductance and, especially, the harmonic distortion exhibited by these devices. Along the work, FinFETs, Gate-All-Around (GAA) devices w
Publicado em: 2010