Hydrogene
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1. Defect engineering in H and He implanted Si
The present work relates an investigation of H2 + and He+ coimplanted (001)-Si substrates. The phenomena of blistering and exfoliation were studied by SEM as a function of the implantation parameters (energy, fluence, current and H/He ration) and annealing protocol. A window behavior as function of the implanted fluence was observed and two distinct fluence
Publicado em: 2009