Hydrogenated Amorphous Silicon
Mostrando 1-12 de 20 artigos, teses e dissertações.
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1. An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications
Abstract This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin-film transistors. Whether for industry or for research, there is a need to investigate the use of th
J. Microw. Optoelectron. Electromagn. Appl.. Publicado em: 2019-03
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2. Deposição de filmes finos de silício amorfo hidrogenado por sputtering reativo. / Deposition of hydrogenated amorphous silicon thin films by reactive sputtering.
Neste trabalho filmes finos de silício amorfo hidrogenado (a-Si:H) foram depositados no reator magnetron sputtering do laboratório de sistemas integráveis (LSI), a temperaturas menores que 100 °C, pela introdução do gás hidrogênio junto com o de argônio para pulverização de um alvo de silício policristalino. As condições de deposição investig
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 21/10/2010
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3. Study of the fabrication steps of an electro-thermo-optical device using Mach-Zehnder interferometer. / Estudo das etapas de fabricação de dispositivos eletro-termo-ópticos utilizando o interferômetro Mach-Zehnder.
In this work, a study of the steps to fabricate an electro-thermo-optical device is realized. This device is based in a Mach-Zehnder interferometer (IMZ) where a micro-resistor is placed in one of the IMZ arms. The Mach-Zehnder interferometer was fabricated using Anti-Resonant Reflecting Optical Waveguide (ARROW) where oxinytride and amorphous hydrogenated s
Publicado em: 2008
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4. Cristalização do germanio amorfo pelo aluminio : caracterização por espectroscopia Raman / Aluminium induced crystallization of the amorphous germanium : characterization for Raman spectroscopy
This research work studies the microscopic mechanisms leading to the low-temperature crystallization of amorphous germanium (a-Ge) films induced by aluminum. The crystallization process was studied in Al-doped samples and also in multi-layer structures possessing an Al layer sandwiched between the substrate and the a-Ge film. In the case of Al-doped samples,
Publicado em: 2007
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5. Neodymium in hydrogenated amorphous silicon sub-nitrides (a-SiNx:H) / Neodimio em sub-nitretos de silicio amorfo hidrogenado (a-SiNx:H)
In this work, we report a study of the photoluminescence (PL) optimization of a-SiNx:H
thin films prepared by RF co-sputtering. The PL was investigated as a function of nitrogen and neodymium concentrations. We observed that the Nd ions are excited through the amorphous matrix. The excitation mechanism is more efficient in samples where the optical gap E0 Publicado em: 2005
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6. Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering
This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10-12 to 10-4 Ohm-1 .cm-1, respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of
Brazilian Journal of Physics. Publicado em: 2002-06
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7. Ressonância paramagnética em germânio amorfo hidrogenado e silício microcristalino hidrogenado
In this thesis, we present for the first time light-induced electron spin resonance, LESR, measurements in a-Ge:H. The signal consists of two different centers: 1) assigned to electrons trapped in conduction band tails; and 2) holes trapped in valence band tails. We also have performed a recombination kinetics study based on the LESR time response. We have f
Publicado em: 2002
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8. Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon
Brazilian Journal of Physics. Publicado em: 2001-03
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9. Análise das propriedades químicas, morfológicas e estruturais de filmes finos de a-Si1-xCx:H depositados por PECVD. / Analysis of the chemical, morphological and structural properties of a-Si1-xCx:H thin films deposited by PECVD.
In this work we discuss the growth and characterization of amorphous hydrogenated silicon carbide thin films (a-Si1-xCx:H) deposited by plasma enhanced chemical vapor deposition (PECVD). It was used a gaseous mixture of silane, methane and hydrogen, at the silane starving plasma regime. Samples grown at these conditions and with a very low silane flow have a
Publicado em: 2001
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10. Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon
The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposi
Brazilian Journal of Physics. Publicado em: 2000
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11. Cristalização uniforme e seletiva de materiais semicondutores amorfos utilizando pulsos curtos de uma fonte de luz laser
We have investigated the laser induced crystallization of amorphous semiconductors using short-pulses (5-7 ns wide) from the second harmonic (l = 532 nm) of a Nd:Yag laser source. The main studied material was the amorphous germanium (a-Ge), while some alloys like its hydrogenated counterpart (a-Ge:H), silicon-germanium (a-SiGe) and germanium nitride (a-GeN)
Publicado em: 1998
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12. Chemical and morphological properties of amorphous hydrogenated. / Propriedades químicas e morfológicas de filmes hidrogenados de carbeto de silício amorfo.
Nesta dissertação discorremos acerca do crescimento e caracterização de filmes finos de carbeto de silício amorfo hidrogenado (a-Si1-xCx:H), crescidos pelo método de deposição química de vapor assistida por plasma (PECVD) no regime de baixa densidade de potência a partir de misturas de silano e metano. Foram analisadas e correlacionadas as propried
Publicado em: 1997