Emission Ellipsometry
Mostrando 1-4 de 4 artigos, teses e dissertações.
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1. Síntese e caracterização de misturas poliméricas condutoras para aplicação em membranas biodegradáveis e dispositivos eletroluminescentes / Synthesis and characterization of conducting polymeric blends for use in biodegradable membranes and electroluminescent devices
The electrical properties of some conducting polymers and their blends have contributed to the technological advancement in various areas such as medicine and microelectronics. Recently, photochemical synthesis and spinner techniques have been using to prepare polymeric blends with good conducting properties. In this study we report the preparation of conduc
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 02/08/2012
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2. Aplicação da técnica de elipsometria de emissão para caracterização de materiais luminescentes
In this work we demonstrated the potential of the emission ellipsometry in the scope of the Stokes theory for electromagnetic field to the photophysics study of luminescent materials, in addition we introduce a new methodology using an achromatic quarter-wave plate. Moreover, the use of linearly polarized light allowed "selectively" the study of various phot
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/02/2012
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3. Study of optical and electro-optical properties of diamond-like carbon films - DLC. / Estudo das propriedades ópticas e eletro-ópticas de filmes de carbono amorfo tipo diamante - DLC.
In this work it was studied electrical and optical characteristics of diamond-like carbon (DLC) films deposited in a reactive RF magnetron sputtering system on silicon and glass substrates. Samples were deposited at different process conditions in each type of substrate at two pressure conditions (5 mTorr and 10 mTorr) and four conditions of RF power (100 W,
Publicado em: 2010
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4. Isolantes de porta com altas constantes dieletricas (High K) para tecnologia MOS / High K gate insulators for MOS technology
High k insulators for the next generation (sub-32 nm CMOS (complementary metaloxide-semiconductor) technology), such as titanium oxide (TiOx), titanium oxynitride (TiOxNy), titanium-aluminum oxynitride (AlxTiwOyNz), titanium-aluminum nitride (AlxTiwNz) and titanium-aluminum oxide (AlxTiwOy), have been obtained by Ti or Ti/Al e-beam evaporation, with addition
Publicado em: 2008