Double Barrier Diodes
Mostrando 1-3 de 3 artigos, teses e dissertações.
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1. The double gaussian distribution of inhomogeneous barrier heights in Al/GaN/p-GaAs (MIS) schottky diodes in wide temperature range
The current-voltage (I-V) characteristics of metal-insulator-semiconductor (Al/GaN/p-GaAs) Schottky barrier diodes (SBDs) were investigated over a wide temperature range of 80-380 K. By using the thermionic emission (TE) theory, the zero bias barrier height ΦB0 calculated from I-V characteristics was found to increase with increasing temperature as the idea
Brazilian Journal of Physics. Publicado em: 2008-12
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2. Influence of minority carrier transport in the optical properties of double barrier diodes
The aim of this work is to study the importance of minority carrier transport in double barrier diodes (DBD). We propose a theoretical model capable to describe the photoluminescence properties observed in GaAs-Al0.35Ga0.65As double barrier diodes with the increase of temperature. In this model, we considered that the minority carries (holes) photocreated at
Brazilian Journal of Physics. Publicado em: 2006-06
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3. Filtros de spin não-magneticos controlados por voltagem / Voltage controlled non-magnetic spin filters
The aim of this work was to study the transport properties of nonmagnetic semiconductor heterostructures: double barrier diodes ? DBD. Our attention was focused on the carrier spin polarization through the structure. First we present the phenomenology behind the carrier transport and how the DBD can act as a spin filter. In the sequence, we present the exper
Publicado em: 2006