Boron Thin Films
Mostrando 1-8 de 8 artigos, teses e dissertações.
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1. Análise de filmes antirreflexo de dióxido de titânio e nitreto de silício em células solares P+NN+
In this work we compared the antireflection coatings of titanium dioxide and silicon nitride for p+nn+ solar cell fabrication. This type of solar cell is more stable in the long term compared to n+pp+ cells and allows obtaining higher efficiencies. TiO2 films were produced by evaporation in high vacuum by electron beam and by chemical vapor deposition at atm
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 07/12/2012
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2. Confecção e calibração de filmes finos de boro para medida da taxa de reação 10B(n,alfa)7 Li na terapia por captura de nêutrons pelo boro / Manufacturing and calibration of boron thin films for the 10B(n,alfa)7 Li reaction rate measurement in the boron neutron capture therapy
O princípio de funcionamento da Terapia por Captura de Nêutrons pelo Boro (BNCT, Boron Neutron Capture Therapy) é a entrega seletiva de uma maior quantidade de átomos de boro às células cancerígenas do que àquelas saudáveis, seguida da irradiação com nêutrons que irá induzir a emissão de partículas a e íons de recuo de 7Li através da reaçã
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 19/03/2012
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3. Estudos da deposição de filmes de diamante CVD sobre carbeto de tungstênio, com interface controlada de boreto / Studies of the deposition of diamond CVD films on tungsten carbide, boride with interface control
The objective of this work was to obtain adherent diamond films on WC-Co substrate through the hot filament assisted CVD technique, using a boriding process to form an intermediate layer and avoid the diffusion of the cobalt to the substrate surface. The boriding process consists of a reactive thermo diffusion treatment, in which boron atoms are spread in th
Publicado em: 2009
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4. Estudo do mecanismo de deposição de filmes finos de nitreto de boro assistida por feixe de íons / Study of the deposition mechanism of boron nitride thin films by ion seam assisted deposition
Filmes finos de BN foram depositados em uma ou duas camadas, em temperaturas entre a temperatura ambiente e 400oC, por deposição a vapor de átomos de boro sobre substratos de Si (111) ou Si (100), com irradiação simultânea de íons de argônio e/ou nitrogênio. A energia de íons variou de 400 a 1000 eV, e a razão de chegada ARR(N/A), definida pela ra
Publicado em: 2009
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5. Filmes de diamante-CVD sobre substrato de titânio puro poroso: uma proposta para aplicação como eletrodo / CVD-diamond films on tridimentional porous pure titanium substrate: an electrode application proposal
A novel composite material formed from nanocrystalline and/or microcrystalline diamond films grown on pure porous titanium substrate was extensively studied taking into account their morphological, structural and electrochemical properties. The films were deposited by chemical vapor deposition technique, using a hot filament reactor, while the powder metallu
Publicado em: 2008
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6. Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present
Brazilian Journal of Physics. Publicado em: 2006-06
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7. Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application
Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V) with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (B\C = 6000 ppm). The films were grown on both sides of p
Materials Research. Publicado em: 2003-01
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8. Preparation and characterization of nanocrystalline h-BN films prepared by PECVD method
This work describes a systematic study of the preparation of nano-crystalline thin h-BN films by Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique. The samples were prepared at low temperatures using B2H6 and N2 as gas precursors. It is shown that the flow ratio among these gases has an important influence on the size of the crystallites (deduced b
Brazilian Journal of Physics. Publicado em: 2002-06