Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application

AUTOR(ES)

Arabshahi, H., Khalvati, M. R., Rokn-Abadi, M. Rezaee

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2008-09

RESUMO

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs structures have been calculated using an ensemble Monte Carlo simulation. Electronic states within the conduction band valleys at the Γ, L and X are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The simulation shows that intervalley electron transfer plays a dominant role in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Our simulation results have also shown that the electron velocity in InAs and AlAs is less sensitive to temperature than in other III-V semiconductors like GaAs and AlGaAs. So InAs and AlAs devices are expected be more tolerant to self-heating and high ambient temperature device modeling. Our steady-state velocity-field characteristics are in fair agreement with other recent calculations.

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