Propriedades estruturais da liga de a-Si-x Cx:H

AUTOR(ES)
DATA DE PUBLICAÇÃO

1996

RESUMO

In this present work, we mainly study the tendency of formation of homonuclear and heteronuclear bonds (chemical order) in a-Si1-xCx:H deposited by RF co-sputtering, and its correlation with optical properties, such as gap energy and structural disorder. The reason on using this deposition technique is that it permits the control of the hydrogen content while changing the carbon concentration, avoiding another parameter that could change the chemical order or disorder preferences. At 20 at. % of carbon content, we see a change in the preference bonding from homonuclear to heteronuclear, leading to a strong influence in optical properties. This change is correlated to bond energies and the system entropy. The different types of bonds were studied by IR spectroscopy. The optical properties were studied by UV -VIS spectroscopy, and the structural topology was studied by Photothermal Deflection Spectroscopy (PDS). The carbon content was estimated from Rutherford Backscattering Spectroscopy (RBS). Following the study of the influence of the p bonds, we studied the correlation between the ion bombardment during the deposition of a-C:H by Glow Discharge and the formation of p bonds. The ion bombardment increases the number of p bonds and consequently the gap energy and the photoluminescence. In this thesis there is also some information about the influence of the RF sputtering deposition parameters on a-Si:H and a-Ge:H. The deposition parameters were correlated with bonding configuration and optical properties using IV and UV ?VIS spectroscopies and PDS. At last, we suggest a new method to estimate the variation of the defect density in a-Si1-xCx:H alloys using PDS

ASSUNTO(S)

carboneto silicio semicondutores amorfos

ACESSO AO ARTIGO

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