Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
AUTOR(ES)
Martins, M. R., Oliveira, J. B. B., Tabata, A., Laureto, E., Bettini, J., Meneses, E. A., Carvalho, M. M. G.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2004-06
RESUMO
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.
Documentos Relacionados
- In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
- Propriedades de pontos quanticos de InP/GaAs
- Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
- Propriedades opticas de pontos quanticos empilhados de InP/GaAs
- Optical properties of stacked InP/GaAs quantum dots
