Non-Linear electron mobility in n-doped III-Nitrides
AUTOR(ES)
Rodrigues, Clóves G., Vasconcellos, Áurea R., Luzzi, Roberto
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-06
RESUMO
A theoretical study of the mobility of n-doped III-Nitrides in wurtzite phase is reported. We have determined the nonequilibrium thermodynamic state of the bulk n-InN, n-GaN, and n-AlN systems - driven far away from equilibrium by a strong electric field - in the steady state, which follows after a very fast transient. For this we solve the set of coupled nonlinear integro-differential equations of evolution of the nonequilibrium thermodynamic variables, for the three materials, to obtain their steady state values. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength and the concentration (of electrons and impurities) is derived, which decreases with the increase of the electric field strength and the concentration of carriers, evidencing the influence of the nonlinear transport involved.
