Multiple phase silicon in submicrometer chips removed by diamond turning

AUTOR(ES)

Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Jr., F., Santos, F. J. dos

FONTE

Journal of the Brazilian Society of Mechanical Sciences and Engineering

DATA DE PUBLICAÇÃO

2005-12

RESUMO

Continuous chips removed by single point diamond turning of single crystal silicon have been investigated by means of Scanning Electron Microscopy/Transmission Electron Microscopy and micro-Raman Spectroscopy. Three different chip structures were probed with the use of electron diffraction pattern: (i) totally amorphous lamellar structure, (ii) amorphous structure with remnant crystalline material and, (iii) partially amorphous together with amorphous with remnant crystalline material. Furthermore, micro-Raman spectroscopy from the chips left in the cutting tool rake face showed different silicon phases. We have found, from a detailed analysis of the debris, five different structural phases of silicon in the same debris. It is proposed that material removal mechanisms may change along the cutting edge from shearing (yielding lamellar structures) to extrusion. Shearing results from structural changes related to phase transformation induced by pressure and shear deformation. Extrusion, yielding crystalline structures in the chips, may be attributed to a pressure drop (due to an increase in the contact area) from the tool tip towards the region of the cutting edge where brittle-to-ductile transition occurs. From this region upwards, pressure(stress) would be insufficient to trigger phase transformation and therefore amorphous phase would not form integrally along the chip width.

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