Manipulation with spin ordering in ferromagnetic semiconductors
AUTOR(ES)
Dietl, Tomasz
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2004-06
RESUMO
A short overview is given of recent advances in the field of carrier-controlled ferromagnetism in Mn-based III-V and II-VI diluted magnetic semiconductors and their nanostructures. The tailoring of domain structures and magnetic anisotropy by strain engineering and confinement is described. Experiments demonstrating the tunability of T C by light and electric field are presented.
Documentos Relacionados
- Transient spin dynamics in semiconductors
- Critical behavior of ferromagnetic spin models with aperiodic exchange interactions
- Spin relaxation and g-factor manipulation in quantum dots
- High-frequency, spin-label EPR of nonaxial lipid ordering and motion in cholesterol-containing membranes
- "Spin and magnetic properties of the III-V group semiconductors"