Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples

AUTOR(ES)

Silva, R. L. da, Albuquerque, H. A., Rubinger, R. M., Oliveira, A. G. de, Ribeiro, G. M., Rodrigues, W. N.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-06

RESUMO

We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurements obtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LT-MBE). The considered growth temperatures were 215ºC and 265ºC. LFO are considered to be spontaneously generated oscillations under constant applied bias V. These oscillations were measurement and recorded in the form of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of the applied bias. The standard measurement procedure was described elsewhere. As the control parameter, the bias allows the identification of a bifurcation route to chaos.

Documentos Relacionados

• Nonlinear dynamics time series analysis of chaotic current oscillations in a semi-insulating GaAs sample
• Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
• Modeling chaotic current oscillations in semi-insulating GaAs with rate-equations of impact ionization and field-enhanced trapping
• Variable range hopping conduction in low-temperature molecular beam epitaxy GaAs
• Filmes de MnAs sobre GaAs e nanoestruturas de MnAs implantadas em GaAs