Local order structure of a-SiOxNy:H grown by PECVD
AUTOR(ES)
Scopel, W.L., Fantini, M.C.A., Alayo, M.I., Pereyra, I.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2002-06
RESUMO
In this work we study the structural properties of amorphous oxynitride films (a-SiOxNy), grown by plasma enhanced chemical vapour deposition (PECVD)at 320° C. The films were deposited at different ow ratio of N2O and SiH4. The atomic composition of the samples was determined by means of Rutherford backscattering spectrometry (RBS). The local order structure was studied by X-ray absorption spectroscopy (XAS) and the chemical bondings were investigated by Fourier transform infrared (FTIR) spectroscopy. The results evidence a tetrahedric arrangement of the oxynitride network. The tetrahedrons are similiar to SiO3N for x values between 1.43 and 1.64. For x values higher than 1.64 the tetrahedrons are similar to SiO4.
Documentos Relacionados
- Study and fabrication of MOS capacitor with PECVD SiOxNy.
- Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD.
- Estudo e produção de filmes de oxinitreto de silício (SiOxNy) pela técnica de PECVD.
- Thermo-mechanical properties of a-SiC:H and SiOxNy thin films and development of MEMS.
- Local order in the transition a-Si:H - uc-Si
