InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
AUTOR(ES)
Lamas, T. E., Quivy, A. A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-06
RESUMO
In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAs quantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulating therefore a low deposition rate. Room-temperature photoluminescence experiments carried out on these samples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate that even better results can be achieved by further manipulation of the growth conditions.
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