Implantação e desenvolvimento de um laboratorio de crescimento epitaxial de semicondutores compostos III-V pelo metodo de epitaxia quimica em vacuo

AUTOR(ES)
DATA DE PUBLICAÇÃO

1991

RESUMO

This experimental work deals with the implantation and development of a laboratory to grow III-V compound semiconductors by the Vacuum Chemical Epitaxy (VCE) method. Several epitaxial methods are described aiming to locate the VCE method in the general context of single crystal thin films production technologies. Major emphasis is given to Organometallic Vapor Phase Epitaxy (OMVPE), direct ascent method to VCE. After a justification of the choice of the material system GaAs/GaAlAs to be grown, a detailed description is made on VCE method emphasising main difficulties found during its implantation and solutions developed to overcome them. At last, an association between the optimization of the layer growth conditions and the results from characterization of the layers by a variety of techniques is tried. These techniques give off many optical and electrical properties of the grown samples. Particularly, the predominant residual impurity is identi:fied on homoepitamal GaAs layers, as well as an analysis of its incorporation is made. The predominant residual impurity is also identified on heteroepitamal GaAlAs layers, in which a heavy residual doping is measured and related to the nature of the precursor organometallic. The VCE system is able to grow any III-V semiconductor compound while be provided the corresponding source vapors along with their mass flow rate controls

ASSUNTO(S)

semicondutores - pesquisa fisico-quimica

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