Hole spin polarization in AlAs/Ga1-x-yMn xAl yAs structures
AUTOR(ES)
Ghazali, A., Lima, I. C. da Cunha, Boselli, M. A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2002-06
RESUMO
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations.
Documentos Relacionados
- Transport properties of a Ga1-xMn xAs/Ga1-yAl yAs double-barrier
- Structural and magnetic properties of the half-ferromagnetic Co2+x+yMn1-xAl1-y alloys
- Magnetic multilayers in Ga1-xMn xAs/GaAs struc
- Relaxação do spin em poços quânticos de InGaAs/GaAs dopados com Mn
- Espalhamento elétron-fônon ótico em fios quânticos de GaAs/Ga1-XAlXAs
