Growth of the In0.53Ga0.47As/ In0.52Al0.48As on InP by MBE / Crescimento de In0.52Al0.48As e In0.53Ga0.47As sobre InP por MBE

AUTOR(ES)
DATA DE PUBLICAÇÃO

1997

RESUMO

In this work Molecular Beam Epitaxy (MBE) was used to growth bidimensional gas structures based on In0.53Ga0.47As/ In0.52Al0.48As on Indium Phosfate substrate (lnP) Structural. electrical and optical properties were analyzed by characterisation techniques such as Hall eflect, photoluminescence (PL), Shubnikov-de Haas (SdH) and Scanning Electron Microscope (SEM) Growth parameter calibration such as growth rate and alloy composition of In0.53Ga0.47As/ In0.52Al0.48As was determined through observation of Reflexion High-Energy Electron Diffraction (RHEED) oscillation. Density of type dopant (in our case silicon Si) was obtained by. Hall effect measurements using Van der Pauw geometry Photoluminescence results show donor to band transition with Full Width at Half Maxima (FHWM) of approximatly 23meV, for the In0.52Al0.48As alloy. Bidimensional gas formation was indirectly observed in these samples through SdH oscillations.

ASSUNTO(S)

inp mbe growth of two-dimensional structure of gases mbe crescimento de estruturas de gases bidimensionais inp

ACESSO AO ARTIGO

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