Fotocondutividade no nitreto de silicio amorfo hidrogenado não estiquiometrico

AUTOR(ES)
DATA DE PUBLICAÇÃO

1985

RESUMO

The off-stoichiometric amorphous hydrogenated silicon nitride (a-SiNx:H) has been studied in the last few years due to its possible applications in photovoltaic devices in many laboratories in the world. In the present work we present the results of measurements of photoconductivity versus temperature and light intensity in material prepared by glow discharge from a mixture of N2 and SiH4. The measurements were done with monochromatic excitation from a He:Ne laser with hn = 1.96eV using the detection in phase method. Temperatures between 120 and 340K and photon fluxes between 6x1011 and 6x1013 cm-2 s-1 were used. We also studied boron doped and phosphorus doped samples. The experimental results allowed us to identify a peak in the density of states in the gap between the Fermi-level and the conduction band due to the presence of nitrogen in the network with a capture cross section for electrons smaller than the one of the state in the gap in non-nitrogenated material. We also detected the presence of deep hole traps between the Fermi-level and the valence band

ASSUNTO(S)

nitreto de silicio fotocondutividade

ACESSO AO ARTIGO

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