Fabricação e caracterização de dispositivos poliméricos emissores de luz com camada ativa de poli(2-metóxi, 5-(2-etil-hexilóxi)-1,4-fenileno vinileno) (MEH-PPV) / Fabrication and characterization of polymer light-emitting diodes with active layer composed by poly(2-methoxy, 5-(2-etil-hexilhoxy)-1,4-phenilene vinilene) (MEH-PPV).

AUTOR(ES)
DATA DE PUBLICAÇÃO

2008

RESUMO

Polymer light emitting diodes (PLEDs) have been widely investigated as candidate materials for display fabrication. The main advantages exhibited by PLEDs are the low-cost processing and possibility of large-area display fabrication, in comparison to the conventional liquid crystal displays (LCDs). Although the engineering aspects concerning device fabrication and characterization are well understood, some specific points regarding the electrical transport in the bulk and at the interfaces of the devices are not fully explained. In this study, we present a morphological, optical and electrical characterization of PLEDs containing poly(2-methoxi, 5-(2-etyl-hexiloxy)-1,4-phenilene vinilene) (MEH-PPV) as the emissive layer. We investigated the influence of hole transport layers (HTL) and/or electron transport layers (ETL) on the efficiency of the devices. The HTL and ETL comprised thin polymeric films of poly(3,4-etylenedioxythiphene):sulfonated polystyrene (PEDOT:PSS) and poly(estyrene-co-p-sulfonated styrene-co-metyl metacrylate) (PS-co-SS-co-MMA), respectively. Devices containing the PEDOT:PSS exhibited a life-time 10 times higher than the devices not containing the HTL material, which is probably due to the controlled hole injection that may be achieved in former devices. In the second set of devices, in which an ETL was incorporated, we observed the formation of localized states in the polymeric ETL layer, which was responsible for improving the tunneling process of charges injected from cathode. A theoretical model concerning the charge injection mechanisms in the PLEDs containing MEH-PPV is presented in chapter 4. The final device architecture was ITO/MEH-PPV/Al, and the J vs. F measurements were taken at temperatures between 120 K and 270 K. The model proposed here is a combination of the Arkhipov´s and Fowler-Nordhein tunneling models, considering a Gaussian distribution of triangular potential barriers. The model takes into account the charge carrier/image charge recombination probability at the interface of the electrode, being very appropriate to explain the dependence of the electric current on the temperature and applied electric field.

ASSUNTO(S)

molecular electronics injection process pled fenômenos de injeção. camadas intermediárias transport layers pleds eletrônica molecular

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