Estudo das propriedades estruturais e optoeletronicas de filmes finos de germanio amorfo hidrogenado

AUTOR(ES)
DATA DE PUBLICAÇÃO

1994

RESUMO

In this work experimental data related to micro void structure and hydrogenation of hydrogenated amorphous germanium (a-Ge:H) thin films are presented. The samples were grown by rf reactive sputtering (13.56MHz) and were studied as grown. The main characterization techniques were infrared spectroscopy and small angle X-ray scattering (SAXS). This work is not an effort for optimizing the a-Ge:H optoelectronic quality, but an effort for understanding the main deposition parameters (substrate deposition temperature Ts, target dc (bias) self polarization and the ratio hydrogen partial pressure/ total pressure) influence on the final thin film properties. The results show that at high deposition temperatures (Ts >150°C) the structural grow is a function of the germanium ad-atoms surface mobility and argon ions energetic bombardment, as some works on the literature. The hydrogenation seems not to influence the void volume fraction. We make some comments on the SAXS data analysis. Possible failures or errors in the data analysis and its interpretation are presented. We propose a numerical corrector method to be used with the determination of the scattering particles distribution function

ASSUNTO(S)

ejeção (fisica) filmes finos espectroscopia de infravermelho espalhamento (fisica)

ACESSO AO ARTIGO

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