Estrategias para obtenção de precursores unicos para a deposição de Nb2O5 ZrO2 e CuO por deposição quimica de vapor por metalorganicos

AUTOR(ES)
DATA DE PUBLICAÇÃO

2002

RESUMO

The aims of this work were to propose and study precursors for low pressure chemical vapor deposition of metal oxides thin films of niobium, zirconium and copper to be used in the electronic industry. This work describes the synthesis and characterization of four new precursors for MOCVD: [Nb(OPr)5]2 (2.1), [Nb(OPr)5(HOPr)] (2.2), [{Zr(HOBu)2(HFTB)2}(HOBu)] (3.1), [Cu(hfacac)2L] where L=THF (4.1), O(Et)2 (4.2), O(Pr)2 (4.3), cis-trans DMOTHF (4.4) and cis-trans DMTHF (4.5). The compounds were analyzed and characterized by FTIR, Raman, RMN and EPR spectroscopy and in one case (compound 2.1) by a X-ray diffraction study. Crystallographic data for compound (2.1) are a= 9,632(2) Å, b= 9,799(4) Å, c= 22,108(6) Å, a = 84,30(5)°, b = 82,07(7)°, g = 76,05(9)°, Z= 2 and it is in space group P(-1). The heteroleptic zirconium alkoxide, compound 3.1 was exhaustively characterized by H-RMN at -90°C and a structure in solution was proposed. In order to obtain the internuclear distance between hydrogen and copper atoms, the copper compound 4.3 was studied by EPR-ESEEM. CVD experiments were carried out for all proposed precursors but only compounds 2.1, 2.2, 3.1 and 4.1 resulted in successful thin film deposits. These thin films were characterized by XPS, UV-Vis reflectance and also EDS as thin films of Nb2O5 and Cu2O, respectively. The volatile part produced in the CVD reactor was characterized by H and F-RMN spectroscopies. These results led to the proposition of a mechanism for the deposition reactions of the precursors 2.1 and 3.1.

ASSUNTO(S)

compostos organometalicos filmes finos deposição quimica de vapor

ACESSO AO ARTIGO

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