Espectroscopia optica em super-redes de GaAs com dopagem delta de Si
AUTOR(ES)
Maria Jose Valenzuela Bell. _
DATA DE PUBLICAÇÃO
1997
RESUMO
We performed the GaAs Si delta doped superlattices optical characterization, using spectroscopic techniques as photoluminescence, photoluminescence sxcitation, time resolved photoluminescence, Raman scattering and time resolved photorefletance. Their electronic structure is such that the electron gas is confined in minibands along the growth direction and present 2D and 3D properties depending on the superlattice period. Interband transitions and their respective recombination times were experimentally determined, by time resolved photoluminescence. Results obtained are in good agreement with the calculated electronic structure. In addition, it was studied the coupling between single particle electronic excitations and LO phonons, which results in asymmetric Fano-like lineshapes. It is shown that vibracional contribution depends strongly on the crystaline axis orientation relative to the incident and scattered light polarization directions. The Fano-like resonance was performed in the backscattering Raman geometry, at room temperature. The spectra showed another contribution from the depletion region at the surface, due to the charge transfer from the first delta doped layer and the surface states. As a consequence, there is a surface electric field, which was studied via photoreflectance and time resolved photoreflectance. Our intention was studied via photoreflectance and time resolved photoreflectance. Our intention was to eliminate the electric field by light injection of electron-hole pairs (photovoltaic effect). It is shown that photoreflectance response time is very to the photovoltaic effect. However, the surface electric field suppression was frustrated due to the observed saturation behavior of the photovoltaic effect as light intensity is increased
ASSUNTO(S)
fotoluminescencia super-redes de semicondutores dopados espectroscopia de raman
