Electronic structure of quantum wires by spatial charge distribution / Estrutura eletrônica de fios quânticos gerados por distribuição de carga espacial

AUTOR(ES)
DATA DE PUBLICAÇÃO

1997

RESUMO

In this work we investigate the electronic structure of space-charge quantum wires obtained via attachment of donors in misorientation steps of semiconductor vicinal surfaces. Recent experimental studies, combining epitaxial growth on GaAs (100) vicinal surfaces (terraces) with the ?-doping technique, suggests that the incorporation of Silicon donors is preferential along the lines that delimit the vicinal terraces in this semiconductor. Based on recent theoretical results suggesting that the Thomas-Fermi is a reliable approximation for the self-consistent potential fo space-charge layers, we have employed this approximation to study the possible influence of various factors such as diffusion of dopants, finite temperature and residual density of acceptors on the electronic structure of these wires. The Kohn-Sham equations, within the local density approximation (T=0K), were also solved as the propose of evaluating the influence of effects due to the non-locality of the kinectic energy densities functional and many body effects (exchange and correlation) that were ignored in the semiclassical approximation.

ASSUNTO(S)

electronic structure estrutura eletrônica fios quânticos quantum wires

ACESSO AO ARTIGO

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