Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells

AUTOR(ES)

Reyes-Gómez, E., Perdomo Leiva, C. A., Oliveira, L. E., Dios-Leyva, M. de

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2006-09

RESUMO

The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g^-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g^-factor theoretically evaluated is found in good agrement with available experimental measurements.

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