Effects of Bias Voltage on Fen Films Prepared by Magnetron Sputtering

AUTOR(ES)

Zeng, Yuqiao, Tan, Zheng, Zhou, Lichu, Jiang, Meiya, Qiu, Yuedong, Fang, Feng, Huang, Haibo, Zhang, Xuhai, Jiang, Jianqing

FONTE

Mat. Res.

DATA DE PUBLICAÇÃO

17/11/2015

RESUMO

Iron nitride films were deposited by radio frequency (RF) reactive magnetron sputtering at different bias voltages. It was found that the composition, structure and magnetic properties of the iron nitride films were strongly dependent on the depositing bias voltage. With a bias voltage of –50 V, the iron nitride film is fully dense and has a homogenous microstructure consisting of α-Fe and Fe16N2, leading to a unique combination of high Ms of 1645 emu/cc, Hc of 5 Oe and μi of 1573.

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