Effect of the dot-dot interaction strength on the conductance of side-connected quantum dots
AUTOR(ES)
Davidovich, Maria A., Apel, V. M., Anda, E. V.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2006-09
RESUMO
The conductance of two interacting dots connected to leads is studied. The configuration is such that one dot is embedded into the leads while the other is tunneling-coupled only to the first dot. The effect of the tunneling interaction strength on the conductance is discussed. As the two dot levels cross the Fermi level the low temperature conductance of the system cancels out, due to interference effects. This cancellation persists over a range of gate potential that depends upon the interaction strength: the greater the interaction the larger the range of gate potential where the current vanishes.
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