Effect of non-abrupt doping and interfacial profiles on the carrier sheet density in one-side modulation-doped GaN/AlGaN quantum wells

AUTOR(ES)

Enders, B. G., Lima, F. M. S., Fonseca, A. L. A., Nunes, O. A. C., Silva Jr, E. F. da

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2009-04

RESUMO

The results of an accurate theoretical study on the effects of non-abrupt doping and interfacial profiles on the electron sheet density in one-side modulation-doped wurtzite GaN/AlGaN single quantum wells at low temperatures are presented. We solve coupled Schrödinger and Poisson equations self-consistently via the finite difference method. By employing a proper discretization on a nonuniform grid and taking into account the strong piezoelectric and spontaneous polarization fields exhibited by the wurtzite III-nitride heterostructures, a substantial increase in the 2DEG density is predicted with the increase of the donor diffusion length and the reduction of the spacer thickness.

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