Difusão de enxofre em arseneto de galio por processamento termico rapido

AUTOR(ES)
DATA DE PUBLICAÇÃO

1991

RESUMO

In this work we develope a. new diffusion technique of S in GaAs. The technique uses a rapid thermal processor (RTP), for a very short time diffusions (15-90s). High concentration (3x1018cm-3) and high mobility (2000cm2/Vs) layers were obtained using this technique. Gallium arsenide FET"s were fabricated and characterized. Transcondutances of 160mS/mm, for gale length of 3 mm, and Series resistance?s per gate width of 1 Wmm were obtained. The results show that the technique developed is capable of yield devices for practical use

ASSUNTO(S)

circuitos integrados semicondutores

ACESSO AO ARTIGO

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