Desenvolvimento de filmes finos de óxidos condutores e transparentes de ZnO para aplicação em células solares

AUTOR(ES)
DATA DE PUBLICAÇÃO

2007

RESUMO

In this work, transparent and conducting undoped zinc oxide (ZnO) thin films were developed with transmittance and electrical resistivity appropriate for application as frontal contact in solar cells. Because of their chemical stability, good electro-optical properties, large band gap, abundance in nature and low toxicity, the ZnO films have emerged as one of the most used transparent and conductive oxides. Thin films were deposited by reactive electron beam evaporation technique with argon-oxygen plasma assistance and by continuous current (D.C) magnetron sputtering. For the development of the parameters the electric resistivity, absorption coefficient and composition of amorphous phase of the films were used as dependent variables. The independent variable were pressure and substrate temperature. The post-processing the annealing led to an increase of the transmittance in the visible light range and decreasing in the electric resistivity of the films produced by electron beam. The critical parameters to achieving a good compromise between resistivity and transmittance were deposited controlling the oxygen partial pressure from 0,083 to 2,8x10-3. This was possible to obtain films of ZnO with transmittance of 78% and low resistivity of 1,13x10-1 Ω.cm by sputtering technique for DC.

ASSUNTO(S)

engenharia de materiais e metalurgica 1.células solares. 2. filmes finos. 3. Óxido de zinco 4.deposição física de vapor.

ACESSO AO ARTIGO

Documentos Relacionados