Contribuição ao estudo da deposição fotoeletroquimica de cobre silicio-p

AUTOR(ES)

Nidinalva Tamacia da Silva

DATA DE PUBLICAÇÃO

1997

RESUMO

: In this work a selective photoelectrochemical copper deposition was developed. The copper thin films was photodeposited from a standard aqueous plating solutions on p-Si. Copper is a promising candidate for use in electronic packaging and ultra-Iarge scale integrated (ULSI) devices due to its low resistivity. However, the thin film morphology is a very important propertie in the electrical properties of the film. In practice, a unifom hard deposit is desired, and care must be taken to prevent the formation of loose deposits consisting of dendrites or powders. Loose deposit of this kind are generally formed under mass transfer control. It was developed a study to prevent the formation of this kind of copper film morphology, based on linear voltammetry techniques under various iIIumination conditions. It was-observed a formation of- an uniform hard copper thin film on p-Si under electrons-holes generation control. The thin film rate growth decrease with the time depositon for an photoelectrochemical deposition carry out under constant current (-55 ?mu?A) and iIIumination (0,95 mW). This indicates that another electrochemical reaction must be occur at the same time of the copper film formation. Pyramidal growth forms have been observed on photodeposited copper films by SEM microscopy

ASSUNTO(S)

semicondutores - gravura eletrodeposição cobre eletroquimica

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