Confinamento lateral de portadores e fotons e o comportamento espectral de laser em tres terminais

AUTOR(ES)

Lisandra Losada Pataro

DATA DE PUBLICAÇÃO

2001

RESUMO

The availability of semiconductor quantum-well structures increased the interest in the development of systems for optical computing and optical interconnection using semiconductor lasers as the basic component in optoelectronic integrated circuits. Therefore, there is a great interest in searching for novel materials and structures as well as fabrication techniques for semiconductor laser devices that can provide the opto-electronic interface. This thesis presents first a study on different optical and electrical lateral confinements in semiconductor lasers. Several processing techniques were investigated, such as wet chemical etching, wet thermal oxidation, regrowth and ion irradiation. Subsequently, after theoretically finding the conditions for single lateral mode operation in ridge lasers, these structures were fabricated and analyzed confirming our predictions. Three Terminal Lasers, which include a short absorbing section along the cavity, were fabricated using this technique. Finally, a study of the influence of this section on the emission spectra of these devices was realized

ASSUNTO(S)

semicondutores dispositivos optoeletronicos lasers semicondutores

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