Chaves optoeletronicas de alta tensão a semicondutor

AUTOR(ES)

Sergio Szpigel

DATA DE PUBLICAÇÃO

1988

RESUMO

In this work we have studied a semiconductor optoelectronic device to switch high-voltage electrical pulses ( >500 V). The semiconductors used were semi-isolant GaAs and InP that show high-resistivity (>107 W.cm) To switch activation we have built a nitrogen laser that gives pulses of 337.1 nm radiation and duration of 2 ns. We have studied the effects of laser power and applied electrical field on the device performance . Subnanosecond electrical pulses with amplitudes as high as 800 V for InP and 450 V for GaAs were obtained We also have built a fast response switch (@ 100 PS) to measure the crystal recombination time The device was activated by ultrashort light pulses (100 fs) of a colliding pulse mode-locked ring dye laser (l = 610 nm)

ASSUNTO(S)

condutividade eletrica fotocondutividade

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