Boron Doped Ultrananocrystalline Diamond Films on Porous Silicon: Morphological, Structural and Electrochemical Characterizations
AUTOR(ES)
Silva, Lilian Mieko da, Santos, Marta dos, Baldan, Maurício Ribeiro, Beloto, Antonio Fernando, Ferreira, Neidenêi Gomes
FONTE
Mat. Res.
DATA DE PUBLICAÇÃO
24/11/2015
RESUMO
Boron doped ultrananocrystalline diamond (BDUND) films were grown and characterized on porous silicon (PS) substrates. PS samples were prepared from n-type monocrystalline silicon wafers (100) with 1-20 Ω.cm of resistivity, by electrochemical etching, using HF-acetonitrile solution as electrolyte. BDUND films were grown by Hot Filament Chemical Vapor Deposition using CH4, H2 and Ar. The doping process consisted of an additional hydrogen line, passing through a bubbler containing B2O3 dissolved in methanol, with boron/carbon ratio of 20000 ppm in solution. Raman spectroscopy and X-Ray diffraction were used to evaluate the quality of the films. Scanning electron microscopy was used for morphological characterization, and confirmed that the films covered the pores without filling them. Electrochemical response and capacitance behavior of the electrodes were explored, by cyclic voltammetry. Samples presented high capacitance, confirming that BDUND/PS electrodes are promising for application as electrochemical capacitors.
Documentos Relacionados
- Filmes de diamante nano/ultrananocristalinos dopados com boro: propriedades morfológicas, estruturais e eletroquímicas
- Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application
- Performance and kinetic-mechanistic aspects in the electrochemical degradation of sulfadiazine on boron-doped diamond electrode
- Influence of Supporting Electrolytes on RO 16 Dye Electrochemical Oxidation Using Boron Doped Diamond Electrodes
- The influence of electrochemical pre-treatment of B-doped diamond films on the electrodeposition of Pt