Ballistic transport in semiconductor quantum wires in the presence of defects
AUTOR(ES)
Rocha, A. R., Brum, J. A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2002-06
RESUMO
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.
Documentos Relacionados
- Ballistic transport in open quantum dots: scar wavefunctions and resonance line shapes
- Conductance of three-dimensional cross junctions in the quantum ballistic regime
- Prorpiedades de transportes em fios e poÃos quÃnticos.
- Hall effect in InAs/GaAs superlattices with quantum dots: identifying the presence of deep level defects
- Semiconductor quantum dot nanostructures and their roles in the future of photonics
