Analogic memories characterization implemented with floating gate MOS transistors / Caracterização de memorias analogicas implementadas com transistores MOS floating gate

AUTOR(ES)
DATA DE PUBLICAÇÃO

2005

RESUMO

Monolithic integration of memories and analog circuits ,in the same die offers interesting advantages like: smaller application boards, higher robustness and mainly lower costs. Today, a profitable integration of these kind of circuit can only be possible using conventional CMOS technology, which allows efficiently extraordinary levels of integration. Thus, the possibility of integrating analog memories looks more suitable since one single cell (usually use one or two transistors) serves for storing the same data stored by few digital memory cells, therefore, they requiring less area. In this work, it was implemented different memory cells together with few devices using floating gate MOS transistors and manufactured by a conventional CMOS technology. Differemt sort of programrning , data retention, and endurance were characterized as well as the main characteristics of the FGMOS (Floating Gate MOS) were obtained. The results of their characterization reveal that is possible to make and to program fIoating gate MOSFETS analog memories and must serve as starting-point and reference for new academic studies.

ASSUNTO(S)

transistores de efeito de campo microeletronica computer memory system circuitos integrados integrated circuits transistors transistores sistemas de memoria de computadores memoria cache microelectronics field effect transistor

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