An FET-based microwave active circuit with dual-band negative group delay
AUTOR(ES)
Ravelo, Blaise, De Blasi, Serge
FONTE
Journal of Microwaves, Optoelectronics and Electromagnetic Applications
DATA DE PUBLICAÇÃO
2011-12
RESUMO
Recent studies proved that certain electronic active circuits are capable to exhibit simultaneously a negative group delay (NGD) and amplification in microwave frequency bands. One of the simplest topologies generating this counterintuitive NGD function effect is formed by a series RLC-network in cascade with a transistor. By using this cell, similar to the classical electronic functions, dual-band NGD microwave devices with loss compensation possibility can be designed. Theoretic demonstrations concerning the theory of the NGD circuit considered are presented. The dual-band NGD concept feasibility is concretely illustrated by an example of EM/circuit co-simulations. So, in frequency domain, dual-band NGD with minimal values of about -1 ns was observed simultaneously within two frequency bands centered at about 1.05 GHz and 2.05 GHz. To highlight the functioning of the hybrid device considered, time-domain analysis showing the RF/microwave signal advancement is performed. As application, the concept investigated can be envisaged for data synchronization in multi-channel wireless communication systems eventually degraded by undesired EMI effects.
Documentos Relacionados
- Design and Implementation of Microwave Dual-Band Pass Interdigital Filter Using an Analytical Approach
- Dual-band X/Ku Reflectarray Antenna Using a Novel FSS-Backed Unit-Cell with Quasi-Spiral Phase Delay Line
- A Compact Dual-Band Self-Diplexing MIMO Patch Antenna for ISM and X-Band Communications
- Radiation Efficiency of an Electrically Small Dual-band UHF Microstrip Patch Antenna Using Wheeler Cap Method
- A New Miniaturized Low-Profile and Stable Dual-Band FSS with 2.5D Structure for ISM Bands