A cinética ultra-rápida de excitações elementares em semicondutores fotoexcitados

AUTOR(ES)

Rogerio Moreira de Souza

DATA DE PUBLICAÇÃO

2006

RESUMO

In this work it is introduced some results of the studies of kinetic evolution to the equilibrium state of a photo-excited semiconductors. The equations of transistors that describes the evolution to the equilibrium was obtained through the Statistics Operator Method of not-equilibrium in Zubarev version. The semiconductor is described in terms of having a charge (Electrons and hole photo-injecteds through an external source of energy) interacting with one another and with a Crystal clear net (phonons). On the model are considered the effects of direct recombination to the pair Electron hole, dissemination ambipolar and blindagem interaction electron-phonon. The phonons group longitudinals optic (LO) and transversals optic (TO) are treated like groups out of equilibrium thermal while the groups of phonons longitudinals acoustic (LA) are taken in permanent equilibrium with thermal reservour. Statistic results are showed to the Arseneto de Gálio (GaAs) evidencing not only the transient state but also the stationary state of the plasma. Besides it is introduced a first result about the use of a statistic not conventional (Renyi s statistic) to description of the group phonons LO group.

ASSUNTO(S)

cinética ultra-rápida fisica da materia condensada semicondutores excitações elementares

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